Toshiba - HN1K04FU

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HN1K04FU by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN1K04FU
Description N-CHANNEL; Configuration: SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
Datasheet HN1K04FU Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .05 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 6
Maximum Power Dissipation (Abs): .2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 50 ohm
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .05 A
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