Toshiba - HN2E04F-GR(T5LPEWF

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HN2E04F-GR(T5LPEWF by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number HN2E04F-GR(T5LPEWF
Description PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;
Datasheet HN2E04F-GR(T5LPEWF Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
No. of Terminals: 6
Maximum Collector-Emitter Voltage: 120 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOW NOISE
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