Toshiba - JS8851-AS

  1. Home
  2. Toshiba - JS8851-AS
JS8851-AS by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number JS8851-AS
Description RF Small Signal Field-Effect Transistors; Minimum DS Breakdown Voltage: 15 V; Highest Frequency Band: KU BAND; Maximum Drain Current (ID): .25 A; Transistor Application: AMPLIFIER; JESD-30 Code: DIE-8;
Datasheet JS8851-AS Datasheet
NAME DESCRIPTION
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .25 A
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 8
Minimum DS Breakdown Voltage: 15 V
Qualification: Not Qualified
Package Style (Meter): DIE
JESD-30 Code: DIE-8
Operating Mode: DEPLETION MODE
Highest Frequency Band: KU BAND
Peak Reflow Temperature (C): 240
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N4223 by Texas Instruments

2N4223

Texas Instruments

2N4223 by Texas Instruments is an N-CHANNEL RF FET with 30V DS Breakdown Voltage, 10 dB Power Gain, and 0.02A Drain Current. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to DEPLETION MODE operation. Package: METAL, Shape: ROUND, Technology: JUNCTION.
BF247C by NXP Semiconductors

BF247C

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Package Style (Meter): CYLINDRICAL; Minimum DS Breakdown Voltage: 25 V;
CLF1G0035-100,112 by NXP Semiconductors

CLF1G0035-100,112

NXP Semiconductors

N-CHANNEL; Maximum Operating Temperature: 250 Cel;
ATF-521P8-BLK by Broadcom

ATF-521P8-BLK

Broadcom

Broadcom ATF-521P8-BLK is an N-channel FET with 15.5 dB power gain, ideal for amplifier applications in L Band frequencies. With a max drain current of 0.5 A and operating temperature up to 150°C, it offers high electron mobility technology in a small outline package.
BF244ARLRA by Onsemi

BF244ARLRA

Onsemi

BF244ARLRA by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3 (THROUGH-HOLE).
3SK167-2 by Onsemi

3SK167-2

Onsemi

3SK167-2 by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.2W. Ideal for applications requiring small signal amplification in high-frequency circuits up to 125 °C ambient temperature.
BF1212WR,115 by NXP Semiconductors

BF1212WR,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Terminals: 4; Operating Mode: DUAL GATE, ENHANCEMENT MODE;
BF511-TAPE-7 by NXP Semiconductors

BF511-TAPE-7

NXP Semiconductors

BF511-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 20V, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
SHF-0189 by Rf Micro Devices

SHF-0189

Rf Micro Devices

SHF-0189 by Rf Micro Devices is an N-channel RF FET for switching applications. It features a min DS breakdown voltage of 9V, power gain of 12dB, and operates in depletion mode. With a max drain current of 0.384A and operating temperature up to 85°C, it is ideal for C band frequency applications.
934057514115 by NXP Semiconductors

934057514115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 6 V;
CLF1G0035S-100P by NXP Semiconductors

CLF1G0035S-100P

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
CLF1G0035-50,112 by NXP Semiconductors

CLF1G0035-50,112

NXP Semiconductors

N-CHANNEL; Maximum Operating Temperature: 250 Cel;
BF556C,215 by NXP Semiconductors

BF556C,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
2N4416A by Asi Semiconductor

2N4416A

Asi Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; JESD-30 Code: O-MBCY-W4; Terminal Form: WIRE;
BF556CT/R by NXP Semiconductors

BF556CT/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
J310 by Motorola

J310

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; JESD-609 Code: e0;
NE3210S01-T1 by Renesas Electronics

NE3210S01-T1

Renesas Electronics

NE3210S01-T1 by Renesas Electronics is a N-CHANNEL RF FET for AMPLIFIER applications. Features include Gp of 12 dB, DEPLETION MODE operation, and KU BAND frequency band. With a max power dissipation of 0.165 W and operating temp up to 125 °C, it's ideal for MICROWAVE systems.
JANTX2N3822 by Motorola

JANTX2N3822

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; No. of Elements: 1; Reference Standard: MIL-19500/375G;
934050330215 by NXP Semiconductors

934050330215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
BF998RT/R by NXP Semiconductors

BF998RT/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: AMPLIFIER;