Toshiba - JS8851-AS

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JS8851-AS by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number JS8851-AS
Description RF Small Signal Field-Effect Transistors; Minimum DS Breakdown Voltage: 15 V; Highest Frequency Band: KU BAND; Maximum Drain Current (ID): .25 A; Transistor Application: AMPLIFIER; JESD-30 Code: DIE-8;
Datasheet JS8851-AS Datasheet
NAME DESCRIPTION
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .25 A
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 8
Minimum DS Breakdown Voltage: 15 V
Qualification: Not Qualified
Package Style (Meter): DIE
JESD-30 Code: DIE-8
Operating Mode: DEPLETION MODE
Highest Frequency Band: KU BAND
Peak Reflow Temperature (C): 240
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