Toshiba - MG200J2YS2

IRG7PH42UD1-EP by International Rectifier is an N-channel IGBT with a max collector-emitter voltage of 1200V. It has a single built-in diode and is used for power control applications.

Mitsubishi Electric's CM200TX-24T is an N-CHANNEL IGBT with 1200V VCEsat, 200A IC, and 1040W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration in a rectangular package with 35 terminals. Operating b/w -40 to 150 °C, it offers fast rise/fall times of 200/500 ns.

IRG4BC30UPBF by Infineon is an N-CHANNEL IGBT with 600V VCE, 23A IC, and 100W Ptot. It has a toff of 320ns and tf of 150ns, ideal for POWER CONTROL applications. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

Powerex CM1000E3U-34NF is an N-CHANNEL IGBT with 1700V VCE, 1000A IC, and 150°C max temp. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style.

FP100R06KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V. It has a nominal turn-off time of 820ns and a nominal turn-on time of 170ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and power supplies.

Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

IRG4BC30S-STRLP by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 34A. It has a Nominal Turn Off Time of 1550ns and Nominal Turn On Time of 40ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. This IGBT comes in a RECTANGULAR package style with GULL WING terminals, suitable for surface mount assembly in various electronic devices.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 16 A; Additional Features: LOW CONDUCTION LOSS, HIGH SPEED SWITCHING;

Mitsubishi Electric's CM300DU-24NFH is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Features include 1200V VCEsat, 300A IC, and 1900W power dissipation. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 100 A; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 378 W; Maximum Collector Current (IC): 120 A; Maximum Operating Temperature: 150 Cel;

Semikron International's SKM145GB066D is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and can handle up to 195A of Collector Current. Ideal for POWER CONTROL applications, this IGBT operates at a max temperature of 175°C with a fast Turn Off Time of 536ns.

STGP5H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V, IC of 10A, and Ptot of 88W. Ideal for power control applications due to its fast turn-off time (toff) of 280ns and high collector-emitter voltage rating of 600V. The package style is flange mount with through-hole terminals.

Infineon's IGW60T120FKSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 100A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and 730ns turn-off time. The package is rectangular in shape with through-hole terminals.

Microchip Technology's APT85GR120B2 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 170A max collector current. Ideal for motor control applications, it has a 445ns turn-off time, 113ns turn-on time, and can handle up to 962W power dissipation.

IGP50N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it suitable for power control applications. The transistor comes in a rectangular package style with through-hole terminals and can operate at temperatures up to 175°C.

IXXH100N60B3 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 220A IC, and 830W power dissipation. Ideal for POWER CONTROL applications, it features a single configuration in a rectangular package with through-hole terminals.

IKY40N120CS6XKSA1 by Infineon: N-Channel IGBT with VCEsat of 2.15V, IC of 80A, and Pdiss of 500W. Ideal for high-power applications like motor drives and renewable energy systems due to its high voltage rating and fast switching times.

The Littelfuse MG06100S-BR1MM is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 600V, max current of 150A, and turn off time of 390ns. Ideal for POWER CONTROL applications, it operates b/w -40 to 150°C with UL RECOGNIZED standard compliance.

FGB20N60SFD_F085 by Fairchild Semiconductor is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a turn-off time of 123ns and turn-on time of 28ns, suitable for power control applications. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.