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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MG200Q1US1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Transistor Application: POWER CONTROL; JESD-30 Code: R-PUFM-X4; |
| Datasheet | MG200Q1US1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 200 A |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 4 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PUFM-X4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Additional Features: | HIGH SPEED |
| Maximum VCEsat: | 4 V |
| Maximum Fall Time (tf): | 500 ns |
