Toshiba - MG25N2YK1

  1. Home
  2. Toshiba - MG25N2YK1
MG25N2YK1 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number MG25N2YK1
Description NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Minimum DC Current Gain (hFE): 100; Terminal Form: UNSPECIFIED;
Datasheet MG25N2YK1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 25 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 100
No. of Terminals: 7
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 900 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Case Connection: ISOLATED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BD138 by Motorola

BD138

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 60 V;
TIP111G by Onsemi

TIP111G

Onsemi

TIP111G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It features 50W power dissipation, 80V max collector-emitter voltage, and 2A max collector current. The package is rectangular with through-hole terminals and can operate up to 150°C.
BD679AG by Onsemi

BD679AG

Onsemi

BD679AG by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
TIP115 by Micro Commercial Components

TIP115

Micro Commercial Components

Power Bipolar Transistors; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; No. of Terminals: 3;
TIP41C by Samsung

TIP41C

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD140-16 by Continental Device India

BD140-16

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
JAN2N3055 by Api Technologies

JAN2N3055

Api Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP115 by Texas Instruments

TIP115

Texas Instruments

TIP115 by Texas Instruments is a PNP Darlington transistor with max. power dissipation of 50W, hFE of 500, and max. collector current of 4A. Ideal for switching applications due to its high gain and low collector-emitter voltage drop. Package style is flange mount with through-hole terminals for easy installation.
BD140-16 by STMicroelectronics

BD140-16

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP142T by Samsung

TIP142T

Samsung

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON;
TIP112 by Nte Electronics

TIP112

Nte Electronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V; Terminal Form: THROUGH-HOLE;
MJE3055T by New Jersey Semiconductor Products

MJE3055T

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;
TIP29C by SPC TECHNOLOGY/ MULTICOMP

TIP29C

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 100 V;
TIP142 by Central Semiconductor

TIP142

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT;
2SC5200 by Inchange Semiconductor

2SC5200

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;
BD138 by Baneasa S A

BD138

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 1 A; Terminal Form: THROUGH-HOLE;
TIP31C by Micro Commercial Components

TIP31C

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: PLASTIC/EPOXY;
BCP56-16 by Diodes Incorporated

BCP56-16

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; Package Shape: RECTANGULAR;
BD139-16 by STMicroelectronics

BD139-16

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A;
TIP120 by Power Innovations

TIP120

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-220AB; Terminal Form: THROUGH-HOLE;