Toshiba - MG25Q6ES1

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MG25Q6ES1 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG25Q6ES1
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 25 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON; Qualification: Not Qualified;
Datasheet MG25Q6ES1 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 25 A
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
No. of Elements: 6
Polarity or Channel Type: N-CHANNEL
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