Image shown is a representation only.
| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MG25Q6ES42 |
| Description | N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Additional Features: HIGH SPEED; JESD-30 Code: R-PUFM-D17; |
| Datasheet | MG25Q6ES42 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 25 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 17 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PUFM-D17 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | SOLDER LUG |
| Additional Features: | HIGH SPEED |
| Maximum Operating Temperature: | 150 Cel |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 4 V |
| Maximum Fall Time (tf): | 500 ns |
