MG30D1ZM1 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	MG30D1ZM1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 60 A;
Datasheet	MG30D1ZM1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	60 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	5
Minimum DS Breakdown Voltage:	250 V
Qualification:	Not Qualified
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.125 ohm

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