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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MG400J1US21 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Maximum Collector Current (IC): 400 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 600 V; No. of Elements: 1; |
| Datasheet | MG400J1US21 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Collector Current (IC): | 400 A |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 600 V |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| No. of Elements: | 1 |
| Polarity or Channel Type: | N-CHANNEL |









