MG50J6ES50 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	MG50J6ES50
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 600 V;
Datasheet	MG50J6ES50 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	50 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	240 ns
Transistor Application:	MOTOR CONTROL
Maximum Turn On Time (ton):	160 ns
Maximum Gate-Emitter Threshold Voltage:	8 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Nominal Turn Off Time (toff):	200 ns
No. of Terminals:	19
Maximum Power Dissipation (Abs):	280 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	80 ns
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	400 ns
JESD-30 Code:	R-XUFM-X19
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	280 W
Maximum Fall Time (tf):	300 ns
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Additional Features:	HIGH SPEED
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.7 V

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