MG600J1US51 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	MG600J1US51
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
Datasheet	MG600J1US51 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	600 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	5
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Additional Features:	HIGH SPEED
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	240

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