Toshiba - MG800J1US51

MG800J1US51 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG800J1US51
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 800 A; Transistor Application: POWER CONTROL; Maximum Operating Temperature: 150 Cel;
Datasheet MG800J1US51 Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 800 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 5
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Additional Features: HIGH SPEED
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 240
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