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Manufacturer | Toshiba |
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Manufacturer's Part Number | MG800J1US51 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 800 A; Transistor Application: POWER CONTROL; Maximum Operating Temperature: 150 Cel; |
Datasheet | MG800J1US51 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Collector Current (IC): | 800 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
No. of Terminals: | 5 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 600 V |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X5 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Additional Features: | HIGH SPEED |
Maximum Operating Temperature: | 150 Cel |
Peak Reflow Temperature (C): | 240 |