Toshiba - MG8J6ES1

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MG8J6ES1 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MG8J6ES1
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 8 A; Maximum Gate-Emitter Voltage: 20 V; No. of Elements: 6;
Datasheet MG8J6ES1 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 8 A
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 50 W
Maximum Collector-Emitter Voltage: 600 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
No. of Elements: 6
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Maximum VCEsat: 4 V
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