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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MIG15J855 |
| Description | Insulated Gate Bipolar Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Maximum Collector Current (IC): 15 A; Package Style (Meter): IN-LINE; Qualification: Not Qualified; |
| Datasheet | MIG15J855 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 15 A |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 20 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 55 W |
| Maximum Collector-Emitter Voltage: | 600 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-XDIP-T20 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Maximum VCEsat: | 2.8 V |
