Toshiba - MIG20J806H

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MIG20J806H by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MIG20J806H
Description Insulated Gate Bipolar Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; Maximum Collector Current (IC): 25 A; Terminal Position: UPPER; JESD-30 Code: R-XUFM-P24;
Datasheet MIG20J806H Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 25 A
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
No. of Terminals: 24
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 90 W
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-P24
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: PIN/PEG
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.7 V
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