Toshiba - MIG30J806E

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MIG30J806E by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MIG30J806E
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 30 A; Maximum VCEsat: 2.8 V; No. of Elements: 6; Maximum Collector-Emitter Voltage: 600 V;
Datasheet MIG30J806E Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 30 A
Maximum Power Dissipation (Abs): 125 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 6
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.8 V
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