Toshiba - MIG30J906E

  1. Home
  2. Toshiba - MIG30J906E
MIG30J906E by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number MIG30J906E
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 35 A; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 2.8 V;
Datasheet MIG30J906E Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 35 A
Maximum Power Dissipation (Abs): 125 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 3
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.8 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SGS10N60RUFDTU by Onsemi

SGS10N60RUFDTU

Onsemi

SGS10N60RUFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 16A IC, and 35W Pd. Ideal for MOTOR CONTROL applications due to its fast tf of 220ns and toff of 284ns. The package style is FLANGE MOUNT with a max operating temp of 150°C.
ISL9V3040P3 by Onsemi

ISL9V3040P3

Onsemi

ISL9V3040P3 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a Max Collector-Emitter Voltage of 450V and can handle a Max Collector Current of 21A. This IGBT comes in a RECTANGULAR package style with THROUGH-HOLE terminals.
SKM100GB125DN by Semikron International

SKM100GB125DN

Semikron International

SKM100GB125DN by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 3.85V, IC of 100A, and toff of 380ns. Ideal for POWER CONTROL applications, it operates up to 1200V at 150°C with UL RECOGNIZED standards compliance.
APT50GP60J by Microchip Technology

APT50GP60J

Microchip Technology

APT50GP60J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 202ns and a turn-on time of 55ns, making it ideal for power control applications. The transistor comes in a rectangular package style with flange mount and operates at temperatures up to 150°C.
FGH40N60SMDF_F085 by Onsemi

FGH40N60SMDF_F085

Onsemi

FGH40N60SMDF_F085 by Onsemi is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 349W power dissipation. Ideal for power control applications due to its single configuration with built-in diode. Operates in temperatures ranging from -55°C to 175°C, making it suitable for various industrial uses.
IRG4RC10SDPBF by Infineon Technologies

IRG4RC10SDPBF

Infineon Technologies

IRG4RC10SDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 14A. It is designed for POWER CONTROL applications, featuring a small outline package style and built-in diode for efficient performance in power electronics systems.
TSG60N100CEC0 by Taiwan Semiconductor

TSG60N100CEC0

Taiwan Semiconductor

TSG60N100CEC0 by Taiwan Semiconductor is an N-CHANNEL IGBT with 1000V max collector-emitter voltage and 60A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 1510ns.
VS-CPV364M4FPBF by Vishay Intertechnology

VS-CPV364M4FPBF

Vishay Intertechnology

VS-CPV364M4FPBF by Vishay Intertechnology is an N-CHANNEL IGBT with 600V VCEsat, 27A IC, and 63W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration, 240ns fall time, and -40 to 150°C operating temperature range.
FGH60N60SFDTU by Onsemi

FGH60N60SFDTU

Onsemi

FGH60N60SFDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 120A max collector current. It has a single configuration with built-in diode, ideal for power control applications. With a max power dissipation of 378W and operating temperature of 150°C, it offers fast switching times of 62ns fall time and 66ns turn on time.
HGTD1N120BNS9A by Onsemi

HGTD1N120BNS9A

Onsemi

HGTD1N120BNS9A by Onsemi is an N-CHANNEL IGBT transistor for MOTOR CONTROL applications. It features a Max VCEsat of 2.9V, Max Collector-Emitter Voltage of 1200V, and Max Power Dissipation of 60W. With a compact SMALL OUTLINE package style, it operates b/w -55 to 150 °C and has fast switching times (tr: 15ns, tf: 370ns).
FP35R12KT4BOSA1 by Infineon Technologies

FP35R12KT4BOSA1

Infineon Technologies

FP35R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max voltage of 1200V, and turn-off time of 620ns. It is used in applications requiring high power switching capabilities at up to 150°C operating temperature. The transistor's silicon material and complex configuration make it suitable for various industrial uses.
IKD04N60RFBTMA1 by Infineon Technologies

IKD04N60RFBTMA1

Infineon Technologies

IKD04N60RFBTMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 8A max collector current, and 216ns turn-off time. Ideal for power control applications due to its 75W max power dissipation, small outline package style, and built-in diode configuration.
IXGH10N170 by Littelfuse

IXGH10N170

Littelfuse

IXGH10N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 20A max collector current, and 110W max power dissipation. Ideal for power control applications, it has a turn-off time of 630ns and operates up to 150°C.
FF900R12IE4BOSA1 by Infineon Technologies

FF900R12IE4BOSA1

Infineon Technologies

FF900R12IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 900A. Ideal for power control applications due to its fast turn on time of 350ns and turn off time of 940ns at a max operating temperature of 175°C.
IKD04N60RFATMA1 by Infineon Technologies

IKD04N60RFATMA1

Infineon Technologies

IKD04N60RFATMA1 by Infineon is an N-CHANNEL IGBT with 600V max. collector-emitter voltage and 8A max. collector current. It has a built-in diode, 216ns turn-off time, and is ideal for power control applications requiring fast switching speeds in surface mount designs.
HGTP10N120BN by Intersil

HGTP10N120BN

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 198 W; Maximum Collector Current (IC): 35 A; Terminal Finish: Tin/Lead (Sn/Pb);
IGB30N60H3ATMA1 by Infineon Technologies

IGB30N60H3ATMA1

Infineon Technologies

IGB30N60H3ATMA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 60A. It has a nominal turn-off time of 262ns and turn-on time of 40ns, making it ideal for power control applications. This surface-mount transistor comes in a small outline package with GULL WING terminals.
STGB30V60DF by STMicroelectronics

STGB30V60DF

STMicroelectronics

STMicroelectronics' STGB30V60DF is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 60A max collector current. Ideal for power control applications, it features a built-in diode, 225ns turn-off time, and operates up to 175°C.
IXA60IF1200NA by Littelfuse

IXA60IF1200NA

Littelfuse

IXA60IF1200NA by Littelfuse is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 88A, and toff of 350ns. Ideal for POWER CONTROL applications due to its high power dissipation (290W), operating temperature range (-40 to 125°C), and collector-emitter voltage of 1200V.
IRG7PH42UD1MPBF by International Rectifier

IRG7PH42UD1MPBF

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 313 W; Maximum Collector Current (IC): 85 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 150 Cel;