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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MP6754 |
| Description | N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 10 A; Maximum VCEsat: 4 V; |
| Datasheet | MP6754 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 10 A |
| Configuration: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Maximum Rise Time (tr): | 600 ns |
| Transistor Application: | MOTOR CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 9 V |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| No. of Terminals: | 11 |
| Maximum Power Dissipation (Abs): | 40 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T11 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Power Dissipation Ambient: | 40 W |
| Maximum Fall Time (tf): | 350 ns |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 600 V |
| Additional Features: | HIGH SPEED |
| Maximum Gate-Emitter Voltage: | 20 V |
| Maximum VCEsat: | 4 V |
