Toshiba - S-AU25

  1. Home
  2. Toshiba - S-AU25
S-AU25 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number S-AU25
Description NARROW BAND HIGH POWER; Maximum Input Power (CW): 4.7 dBm; Minimum Operating Frequency: 890 MHz; Minimum Operating Temperature: -30 Cel; Gain: 37.7 dB; Maximum Voltage Standing Wave Ratio: 2.5;
Datasheet S-AU25 Datasheet
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2.5
Maximum Input Power (CW): 4.7 dBm
Minimum Operating Frequency: 890 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 915 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Minimum Operating Temperature: -30 Cel
Gain: 37.7 dB
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

RF3827SR by Qorvo

RF3827SR

Qorvo

Qorvo's RF3827SR is a GaAs wide band medium power amplifier with 16 terminals, operating b/w -40°C to 85°C. It requires an 8V power supply and draws a max current of 130mA. Ideal for surface mount applications in RF & microwave systems.
GALI-6F+ by Mini-circuits

GALI-6F+

Mini-circuits

GALI-6F+ by Mini-circuits is a wide band low power RF amplifier with 10 dB gain, operating from 0 to 4000 MHz. It has a max input power of 20 dBm and VSWR of 2.2, suitable for surface mount applications in RF & microwave systems.
ATF-50189 by Broadcom

ATF-50189

Broadcom

NARROW BAND MEDIUM POWER; Minimum Operating Frequency: 0 MHz; Maximum Operating Frequency: 2400 MHz; Construction: COAXIAL;
HMC465LP5ETR by Analog Devices

HMC465LP5ETR

Analog Devices

Analog Devices' HMC465LP5ETR is a wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handles up to 23 dBm CW input power, and has a max temperature range of -40 to +85°C. Ideal for RF and microwave applications requiring high performance in a compact plastic/epoxy package.
TQP3M9018 by Triquint Semiconductor

TQP3M9018

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 50 MHz; Minimum Operating Temperature: -40 Cel;
RF6886TR13 by Rf Micro Devices

RF6886TR13

Rf Micro Devices

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3.6;
HMC636ST89TR by Analog Devices

HMC636ST89TR

Analog Devices

Analog Devices' HMC636ST89TR is a GaAs RF amplifier with 5V power supply, operating from -40 to 85°C. It features wideband low power design in a surface-mount package, ideal for RF and microwave applications requiring high performance in compact setups.
CMPA901A035F1 by Wolfspeed

CMPA901A035F1

Wolfspeed

WIDE BAND HIGH POWER;
XP1050-QJ-0G0T by M/a-com Technology Solutions

XP1050-QJ-0G0T

M/a-com Technology Solutions

XP1050-QJ-0G0T by M/a-com Technology Solutions is a wide band high power RF amplifier with 15 dB gain. It operates b/w 7-9 GHz, handles up to 25 dBm CW input power, and can withstand temperatures from -40 to 85°C. Ideal for applications requiring high power amplification in RF & microwave systems.
HMC478MP86 by Analog Devices

HMC478MP86

Analog Devices

Analog Devices' HMC478MP86 is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. Ideal for RF applications requiring surface mount components in the -40°C to +85°C temperature range.
GALI-51+ by Mini-circuits

GALI-51+

Mini-circuits

GALI-51+ by Mini-circuits is a wide band low power RF amplifier with 14 dB gain and 1.7 VSWR. It operates from 0 to 4000 MHz, suitable for various RF applications. With a compact plastic/epoxy package, it can handle up to 13 dBm input power and supports surface mounting.
CMD291 by Qorvo

CMD291

Qorvo

WIDE BAND MEDIUM POWER;
RDA1005LTR7 by Rf Micro Devices

RDA1005LTR7

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 50 MHz; Power Supplies (V): 5;
GALI-51F+ by Mini-circuits

GALI-51F+

Mini-circuits

GALI-51F+ by Mini-circuits is a wide band low power RF amplifier with 14 dB gain, operating from 0 to 4000 MHz. It has a max input power of 13 dBm and VSWR of 1.7, suitable for RF & microwave applications requiring high performance in a compact package. The component is constructed using bipolar technology and can operate in temperatures ranging from -45 to 85°C.
MGA-62563-TR1 by Agilent Technologies

MGA-62563-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 3000 MHz;
HMC505LP4E by Analog Devices

HMC505LP4E

Analog Devices

Analog Devices' HMC505LP4E is a RF amplifier with 50 ohm impedance, operating frequency range of 6800-7400 MHz, and VSWR of 2. Ideal for narrowband low-power applications in temperatures from -40 to 85°C. Package: PLASTIC/EPOXY, Technology: BIPOLAR, Mounting: SURFACE MOUNT.
CMPA2738060F by Wolfspeed

CMPA2738060F

Wolfspeed

WIDE BAND HIGH POWER;
HMC636ST89E by Analog Devices

HMC636ST89E

Analog Devices

Analog Devices' HMC636ST89E is a GAAS technology RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V power supply. Ideal for wideband low-power applications requiring surface mounting in temperatures ranging from -40°C to 85°C.
A2I09VD015NR1 by NXP Semiconductors

A2I09VD015NR1

NXP Semiconductors

WIDE BAND LOW POWER; Terminal Finish: TIN; JESD-609 Code: e3;
SBB-5089Z by Sirenza Microdevices

SBB-5089Z

Sirenza Microdevices

Sirenza Microdevices' SBB-5089Z is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 12 dBm and operates on a 5V supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can withstand temperatures ranging from -40°C to 85°C.