Toshiba - S-AU94

  1. Home
  2. Toshiba - S-AU94
S-AU94 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number S-AU94
Description NARROW BAND HIGH POWER; Construction: MODULE; Maximum Operating Temperature: 100 Cel; Maximum Voltage Standing Wave Ratio: 4.5; Minimum Operating Frequency: 450 MHz; Maximum Operating Frequency: 490 MHz;
Datasheet S-AU94 Datasheet
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 4.5
Construction: MODULE
Maximum Input Power (CW): 19 dBm
Minimum Operating Frequency: 450 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 490 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Minimum Operating Temperature: -30 Cel
Gain: 24.8 dB
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TGA2237-SM by Triquint Semiconductor

TGA2237-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Terminal Finish: GOLD OVER NICKEL; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Frequency: 30 MHz; Maximum Input Power (CW): 33 dBm;
SPF5043ZSQ by Rf Micro Devices

SPF5043ZSQ

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 11.4 dB;
HMC409LP4E by Analog Devices

HMC409LP4E

Analog Devices

HMC409LP4E by Analog Devices is a GAAS RF amplifier with 28dB gain, operating b/w 3.3-3.8GHz. It has a max input power of 10dBm and operates on a 5V supply. This component is ideal for narrowband medium-power applications requiring surface mounting in the RF & Microwave field.
CMPA901A035F by Wolfspeed

CMPA901A035F

Wolfspeed

WIDE BAND HIGH POWER;
MAX2630EUS-T by Maxim Integrated

MAX2630EUS-T

Maxim Integrated

MAX2630EUS-T by Maxim Integrated is a wide band low power RF amplifier with 11dB gain, operating from 800MHz to 1GHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for applications requiring surface mount construction in RF & microwave systems.
QPA9121SR by Qorvo

QPA9121SR

Qorvo

Qorvo's QPA9121SR is a GAAS RF amplifier with 24dB gain, operating from 2300-5000MHz. It has a max input power of 10dBm and VSWR of 2, suitable for wideband medium power applications. With a compact surface mount package and low supply current of 130mA at 5V, it offers high performance in RF & microwave systems.
HMC863ALC4TR-R5 by Analog Devices

HMC863ALC4TR-R5

Analog Devices

Analog Devices' HMC863ALC4TR-R5 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.
RFPA3800TR7 by Rf Micro Devices

RFPA3800TR7

Rf Micro Devices

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE;
MAX2244EBL-T by Maxim Integrated

MAX2244EBL-T

Maxim Integrated

MAX2244EBL-T by Maxim Integrated is a RF amplifier with 10 dBm CW input power, 6 VSWR, and 3V supply. It operates b/w -40 to 85°C, ideal for narrow band low power applications in the frequency range of 2400-2500 MHz. The component has a surface mount package with 9 terminals and requires a max current of 205 mA.
SP9711 by Api Technologies

SP9711

Api Technologies

SP9711 by Api Technologies is a wide band low power RF amplifier with 10 dB gain. It operates b/w 1000-2000 MHz, handles up to 10 dBm CW input power, and has a VSWR of 2. Ideal for applications requiring high frequency amplification in temperatures ranging from -55 to 85°C.
LT5524EFE#PBF by Analog Devices

LT5524EFE#PBF

Analog Devices

LT5524EFE#PBF by Analog Devices is a wide band low power RF amplifier with 50 ohm impedance, 4.5 dB gain, and 540 MHz max frequency. Ideal for applications requiring amplification in RF and microwave circuits operating b/w -40°C to 85°C.
ADL8121ACPZN-R7 by Analog Devices

ADL8121ACPZN-R7

Analog Devices

ADL8121ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications from 25MHz to 12GHz, it operates b/w -40°C to +85°C with a characteristic impedance of 50Ω. Suitable for surface mount installations with a 5V power supply requirement.
HMC462LP5ETR by Hittite Microwave

HMC462LP5ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
MAAL-011141-000PPR by M/a-com Technology Solutions

MAAL-011141-000PPR

M/a-com Technology Solutions

MAAL-011141-000PPR by M/a-com Technology Solutions is a wide band low power RF amplifier with a gain of 17.5 dB. It has a max input power of 10 dBm and operates in temperatures ranging from -40 to 85 °C. This amplifier is suitable for applications requiring amplification in the RF and microwave frequency range up to 28 GHz.
HMC311SC70ETR by Hittite Microwave

HMC311SC70ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 0 MHz;
HMC441LH5TR by Hittite Microwave

HMC441LH5TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
SGL0363ZSR by Rf Micro Devices

SGL0363ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
HMC799LP3E by Analog Devices

HMC799LP3E

Analog Devices

Analog Devices' HMC799LP3E is a wide band low power RF amplifier with 42 dB gain. Operating from -40°C to 85°C, it covers frequencies from 0 MHz to 700 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
MGA-72543-TR1 by Broadcom

MGA-72543-TR1

Broadcom

Broadcom's MGA-72543-TR1 is a GAAS technology RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF & microwave systems. The component features a plastic/epoxy package body, operates at temperatures from -40°C to 85°C, and requires a 3V power supply.
MD7IC2012GNR1,528 by NXP Semiconductors

MD7IC2012GNR1,528

NXP Semiconductors

NARROW BAND HIGH POWER;