Toshiba - S-AV12

  1. Home
  2. Toshiba - S-AV12
S-AV12 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number S-AV12
Description NARROW BAND LOW POWER; Minimum Operating Frequency: 144 MHz; Maximum Operating Frequency: 148 MHz;
Datasheet S-AV12 Datasheet
NAME DESCRIPTION
Minimum Operating Frequency: 144 MHz
Maximum Operating Frequency: 148 MHz
RF or Microwave Device Type: NARROW BAND LOW POWER
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

HMC326MS8GE by Analog Devices

HMC326MS8GE

Analog Devices

HMC326MS8GE by Analog Devices is a wide band medium power RF amplifier with 18 dB gain and 50 ohm impedance. It operates b/w 3-4.5 GHz, handling up to 15 dBm CW input power. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.
TQP7M9102-PCB2140 by Qorvo

TQP7M9102-PCB2140

Qorvo

WIDE BAND MEDIUM POWER; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD;
GALI-51F by Mini-circuits

GALI-51F

Mini-circuits

GALI-51F by Mini-circuits is a wide band low power RF amplifier with a gain of 14 dB. It operates from 0 MHz to 4000 MHz and can handle a max input power of 13 dBm. This surface mount component is commonly used in RF and microwave applications requiring amplification.
HMC788ALP2E by Analog Devices

HMC788ALP2E

Analog Devices

HMC788ALP2E by Analog Devices is a wide band low power RF amplifier with 9 dB gain and max input power of 15 dBm. It operates in the frequency range of 0-10000 MHz, making it suitable for various RF and microwave applications. With a temperature range from -40 to 85°C, this component is ideal for demanding environments.
HMC374ETR by Hittite Microwave

HMC374ETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Power Supplies (V): 5;
HMC441LH5 by Hittite Microwave

HMC441LH5

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
HMC907ALP5ETR by Analog Devices

HMC907ALP5ETR

Analog Devices

WIDE BAND LOW POWER;
MMG3014NT1 by NXP Semiconductors

MMG3014NT1

NXP Semiconductors

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.
HMC311LP3ETR by Hittite Microwave

HMC311LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;
RF3827SR by Rf Micro Devices

RF3827SR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 20; Construction: COMPONENT; Gain: 20.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: LOW NOISE;
HMC441LC3B by Analog Devices

HMC441LC3B

Analog Devices

Analog Devices' HMC441LC3B is a wide band medium power RF amplifier with 10 dB gain, operating from 6-18 GHz. It has a max input power of 15 dBm and operates on a 5V supply, drawing 115 mA. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.
HMC516LC5TR by Analog Devices

HMC516LC5TR

Analog Devices

HMC516LC5TR by Analog Devices is a GAAS wide band low power RF amplifier with 1 function and 32 terminals. It operates at temperatures ranging from -40 to 85°C and requires a power supply of 3V, drawing a max current of 88mA. This surface mount package is suitable for various RF and microwave applications.
HMC478SC70E by Hittite Microwave

HMC478SC70E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
SBF4089ZSR by Rf Micro Devices

SBF4089ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
MGA-81563-BLKG by Broadcom

MGA-81563-BLKG

Broadcom

Broadcom's MGA-81563-BLKG is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems requiring surface mount components.
AMMP-6220-TR2 by Agilent Technologies

AMMP-6220-TR2

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 3; Package Equivalence Code: LCC8,.2SQ,28;
ALM-32220 by Broadcom

ALM-32220

Broadcom

ALM-32220 by Broadcom is a wide band high power RF amplifier with 13.5 dB gain, operating from 1700 to 2700 MHz. It can handle up to 28 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in RF & Microwave systems.
SKY65404-31 by Skyworks Solutions

SKY65404-31

Skyworks Solutions

SKY65404-31 by Skyworks Solutions is a wide band low power RF amplifier with 11 dB gain, operating from 4900 MHz to 5900 MHz. It has a max input power of 10 dBm and operates on a 3V power supply. Ideal for applications requiring surface mount construction in RF & microwave systems.
ADL5521ACPZ-R7 by Analog Devices

ADL5521ACPZ-R7

Analog Devices

ADL5521ACPZ-R7 by Analog Devices is a wide band low power RF amplifier with a gain of 10.5 dB, operating frequency range from 400 MHz to 4000 MHz, and max input power of 20 dBm. It is constructed using GaAs technology, has a characteristic impedance of 50 ohm, and is suitable for applications requiring high-frequency amplification in RF and microwave systems.
HMC451LC3TR by Hittite Microwave

HMC451LC3TR

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz; Gain: 14 dB; Characteristic Impedance: 50 ohm;