Toshiba - S-AV16L

  1. Home
  2. Toshiba - S-AV16L
S-AV16L by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number S-AV16L
Description NARROW BAND HIGH POWER; Maximum Operating Temperature: 100 Cel; Maximum Operating Frequency: 150 MHz; JESD-609 Code: e0; Maximum Voltage Standing Wave Ratio: 2.5; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet S-AV16L Datasheet
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2.5
Maximum Input Power (CW): 24 dBm
Minimum Operating Frequency: 135 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 150 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -30 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMG3002NT1 by Motorola

MMG3002NT1

Motorola

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;
MGA-565P8-BLK by Broadcom

MGA-565P8-BLK

Broadcom

Broadcom's MGA-565P8-BLK is a wide band low power RF amplifier with 20 dB gain, handling up to 15 dBm CW input power. It operates from 0-3500 MHz, featuring a VSWR of 2. Ideal for RF & microwave applications due to its high performance and matte tin finish.
TQP3M9019 by Qorvo

TQP3M9019

Qorvo

TQP3M9019 by Qorvo is a wide band medium power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 50 MHz to 4000 MHz and can handle a max input power of 23 dBm. This component, with its surface mount package, is commonly used in RF and microwave applications.
XF1001-SC-0G00 by M/a-com Technology Solutions

XF1001-SC-0G00

M/a-com Technology Solutions

XF1001-SC-0G00 by M/a-com Technology Solutions is a wide band medium power RF amplifier with 10.1 dB gain and max input power of 24 dBm. It operates in the frequency range of 0-6000 MHz, making it suitable for various RF and microwave applications requiring high performance amplification in temperatures ranging from -40 to 85°C.
MGA-81563-BLK by Agilent Technologies

MGA-81563-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
PGA-103+ by Mini-circuits

PGA-103+

Mini-circuits

Mini-circuits' PGA-103+ is a wideband low-power RF amplifier with 14.7 dB gain, operating from 50 MHz to 4 GHz. It can handle up to 26 dBm CW input power and has a temperature range of -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.
MW7IC930NR1 by NXP Semiconductors

MW7IC930NR1

NXP Semiconductors

The NXP Semiconductors MW7IC930NR1 is a MOS RF amplifier with 33 dB gain, operating b/w 920-960 MHz. It has a max input power of 20 dBm and VSWR of 10, suitable for narrowband high-power applications at 28V supply voltage.
CMPA2060035F by Wolfspeed

CMPA2060035F

Wolfspeed

WIDE BAND HIGH POWER;
XP1035-QH-0G00 by M/a-com Technology Solutions

XP1035-QH-0G00

M/a-com Technology Solutions

XP1035-QH-0G00 by M/a-com is a GAAS technology RF amplifier with 26 dB gain, operating from 5900 MHz to 9500 MHz. It has a max input power of 15 dBm and operates on a 6V power supply. Ideal for wideband medium-power applications, it features surface mounting and can withstand temperatures from -55°C to 85°C.
MAX2611EUS-T by Maxim Integrated

MAX2611EUS-T

Maxim Integrated

MAX2611EUS-T by Maxim Integrated is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for applications requiring surface mount construction in RF & microwave systems.
SGA-3563 by Rf Micro Devices

SGA-3563

Rf Micro Devices

SGA-3563 by RF Micro Devices is a wide band low power RF amplifier with a gain of 19.5 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and has a max input power of 18 dBm. This component, made of plastic/epoxy, is commonly used in RF and microwave applications.
MGA-53543-BLKG by Agilent Technologies

MGA-53543-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Gain: 14 dB; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Additional Features: LOW NOISE;
MMZ25332BT1 by NXP Semiconductors

MMZ25332BT1

NXP Semiconductors

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.
HMC498LC4 by Hittite Microwave

HMC498LC4

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;
NBB-400-SR by Qorvo

NBB-400-SR

Qorvo

Qorvo's NBB-400-SR RF amplifier operates at 3.9V with a temp range of -45 to 85°C. Featuring bipolar tech, it has 4 terminals and surface mount capability. Ideal for applications requiring ceramic package in RF & microwave systems.
SBB5089ZSR by Qorvo

SBB5089ZSR

Qorvo

Qorvo's SBB5089ZSR is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 24 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mounting with a characteristic impedance of 50 ohms.
ECG008B-G by Triquint Semiconductor

ECG008B-G

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 7.2;
HMC8411TCPZ-EP-PT by Analog Devices

HMC8411TCPZ-EP-PT

Analog Devices

Analog Devices' HMC8411TCPZ-EP-PT is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from -55 to 125 °C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
HMC391LP4E by Hittite Microwave

HMC391LP4E

Hittite Microwave

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 4450 MHz; JESD-609 Code: e3;
SGL0363ZSR by Rf Micro Devices

SGL0363ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;