Toshiba - SSM3J66MFV,L3XGF

  1. Home
  2. Toshiba - SSM3J66MFV,L3XGF
SSM3J66MFV,L3XGF by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number SSM3J66MFV,L3XGF
Description Small Signal Field-Effect Transistors;
Datasheet SSM3J66MFV,L3XGF Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N7002KW by Yangzhou Yangjie Electronics

2N7002KW

Yangzhou Yangjie Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 2.5 ohm; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;
S-LBSS84LT1G by Leshan Radio

S-LBSS84LT1G

Leshan Radio

Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
FDC6561AN by Onsemi

FDC6561AN

Onsemi

FDC6561AN by Onsemi is a N-CHANNEL FET with 2 elements, built-in diode, and max drain current of 2.5A. Ideal for switching applications, it operates in enhancement mode with a min DS breakdown voltage of 30V. With a package style of small outline and Gull Wing terminals, it can handle up to 0.96W power dissipation.
2N7002P,235 by Nexperia

2N7002P,235

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; IEC-60134; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: 1.6 ohm;
2N7002W by Fairchild Semiconductor

2N7002W

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Feedback Capacitance (Crss): 7 pF; Terminal Finish: MATTE TIN;
FDC658P by Onsemi

FDC658P

Onsemi

FDC658P by Onsemi is a P-CHANNEL small signal FET with a min DS breakdown voltage of 30V. It is used for switching applications and operates in enhancement mode. With a max drain current of 4A and a max power dissipation of 1.6W, it offers reliable performance in various electronic circuits.
SI2356DS-T1-GE3 by Vishay Intertechnology

SI2356DS-T1-GE3

Vishay Intertechnology

SI2356DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 40V DS breakdown voltage and 4.3A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.051 ohm on-resistance. The small outline package features gull wing terminals and can withstand temperatures from -55 to 150°C.
BSS138W by Good-ark Electronics

BSS138W

Good-ark Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
DMN6140L-7 by Diodes Incorporated

DMN6140L-7

Diodes Incorporated

DMN6140L-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage and 1.6A max drain current, ideal for switching applications. It features a single configuration with built-in diode, operating in enhancement mode with 0.14 ohm RDS(on). This small outline transistor has a matte tin finish and meets AEC-Q101 standards for automotive use.
DMN3404L-7 by Diodes Incorporated

DMN3404L-7

Diodes Incorporated

Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
SI4459ADY-T1-GE3 by Vishay Siliconix

SI4459ADY-T1-GE3

Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .005 ohm;
NTS4101PT1G by Onsemi

NTS4101PT1G

Onsemi

NTS4101PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and 0.12 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max Drain Current of 1.37A and can withstand temperatures up to 150°C.
2N7002K by Vishay Intertechnology

2N7002K

Vishay Intertechnology

2N7002K by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 2 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 150 °C.
FDS9435A_NL by Fairchild Semiconductor

FDS9435A_NL

Fairchild Semiconductor

FDS9435A_NL by Fairchild Semiconductor is a P-CHANNEL FET with 30V DS breakdown voltage. It is used for switching applications, has a max drain current of 5.3A, and operates in enhancement mode.
2N7002KW by Diodes Incorporated

2N7002KW

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Minimum DS Breakdown Voltage: 60 V; Transistor Application: SWITCHING;
2N7002W by Jiangsu Changjiang Electronics Technology

2N7002W

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .115 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSD316SNH6327XTSA1 by Infineon Technologies

BSD316SNH6327XTSA1

Infineon Technologies

Infineon's BSD316SNH6327XTSA1 is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for automotive applications. Featuring single configuration with built-in diode, it has 6 terminals in gull wing form and operates in enhancement mode. With 0.5W max power dissipation and -55 to 150 °C operating temp, it offers low 0.0016 ohm RDS(on) for efficient performance.
MMBFJ201 by Onsemi

MMBFJ201

Onsemi

MMBFJ201 by Onsemi is a N-CHANNEL FET with PLASTIC/EPOXY body, suitable for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and can handle up to 0.35W power dissipation. This SMALL OUTLINE transistor has a max operating temperature of 150°C and peak reflow temperature of 260°C.
SI2323DDS-T1-GE3 by Vishay Intertechnology

SI2323DDS-T1-GE3

Vishay Intertechnology

SI2323DDS-T1-GE3 by Vishay Intertechnology is a P-channel small signal FET with a min DS breakdown voltage of 20V. It is used for switching applications and operates in enhancement mode. With a max drain current of 5.3A and a max drain-source on resistance of 0.039 ohm, it offers efficient performance in a compact package.
2N7002K by Jiangsu Changjiang Electronics Technology

2N7002K

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;