SSM5H12TU by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	SSM5H12TU
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
Datasheet	SSM5H12TU Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.9 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	5
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	125 Cel
Maximum Drain-Source On Resistance:	.133 ohm

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