Toshiba - SSM6P49NU,LF(T

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SSM6P49NU,LF(T by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM6P49NU,LF(T
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Terminal Position: DUAL; Maximum Drain-Source On Resistance: .045 ohm;
Datasheet SSM6P49NU,LF(T Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4 A
Maximum Pulsed Drain Current (IDM): 16 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Maximum Power Dissipation (Abs): 1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Drain Current (Abs) (ID): 4 A
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .045 ohm
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