Toshiba - TK12J60W(F)

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TK12J60W(F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK12J60W(F)
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Maximum Drain Current (Abs) (ID): 11.5 A; Maximum Operating Temperature: 150 Cel;
Datasheet TK12J60W(F) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 110 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 11.5 A
Maximum Drain Current (Abs) (ID): 11.5 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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