Toshiba - TK22V65X5,LQ

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TK22V65X5,LQ by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK22V65X5,LQ
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Operating Temperature: 150 Cel; Maximum Pulsed Drain Current (IDM): 88 A;
Datasheet TK22V65X5,LQ Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 318 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 6 pF
Maximum Drain Current (ID): 22 A
Maximum Pulsed Drain Current (IDM): 88 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 650 V
Maximum Power Dissipation (Abs): 180 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PSSO-N4
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .17 ohm
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