Toshiba - TK35S04K3L(TE16L1)

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TK35S04K3L(TE16L1) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK35S04K3L(TE16L1)
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Drain Current (Abs) (ID): 35 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet TK35S04K3L(TE16L1) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 58 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 35 A
Maximum Drain Current (Abs) (ID): 35 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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