Toshiba - TK380P65Y,RQ

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TK380P65Y,RQ by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK380P65Y,RQ
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; No. of Terminals: 2; Maximum Operating Temperature: 150 Cel;
Datasheet TK380P65Y,RQ Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9.7 A
Maximum Pulsed Drain Current (IDM): 38.8 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 80 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .38 ohm
Avalanche Energy Rating (EAS): 96 mJ
Other Names: TK380P65YRQDKR
TK380P65YRQTR
TK380P65YRQ(S
TK380P65YRQCT
TK380P65Y,RQ(S
Maximum Feedback Capacitance (Crss): 2.5 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 650 V
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