Toshiba - TK5Q65W

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TK5Q65W by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK5Q65W
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Terminal Position: SINGLE; JESD-30 Code: R-PSIP-T3;
Datasheet TK5Q65W Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 70 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.2 A
Maximum Pulsed Drain Current (IDM): 20.8 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 650 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 1.22 ohm
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