Toshiba - TK6R7A10PL

  1. Home
  2. Toshiba - TK6R7A10PL
TK6R7A10PL by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TK6R7A10PL
Description Power Field-Effect Transistors;
Datasheet TK6R7A10PL Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRF9530 by Intersil

IRF9530

Intersil

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Avalanche Energy Rating (EAS): 500 mJ; No. of Elements: 1;
G3R350MT12J by Genesic Semiconductor

G3R350MT12J

Genesic Semiconductor

Power Field-Effect Transistors;
BSC320N20NS3GATMA1 by Infineon Technologies

BSC320N20NS3GATMA1

Infineon Technologies

BSC320N20NS3GATMA1 by Infineon is a N-CHANNEL FET with 200V DS breakdown voltage, 144A pulsed drain current, and 0.032 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode and enhancement mode operation. Package style is small outline, suitable for surface mount technology.
2N7002BKMB,315 by NXP Semiconductors

2N7002BKMB,315

NXP Semiconductors

2N7002BKMB,315 by NXP Semiconductors is a single N-channel power FET with an operating mode of enhancement. It has a max drain current of 0.45A and a max power dissipation of 0.715W. This MOSFET is suitable for applications requiring high efficiency and temperature resistance up to 150°C.
FDMS86263P by Onsemi

FDMS86263P

Onsemi

The Onsemi FDMS86263P is a P-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 70A and EAS of 384mJ, operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package style and -55 to 150 °C temperature range, it offers efficient performance in various electronic systems.
NDT3055L by National Semiconductor

NDT3055L

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
IRFH5015TRPBF by Infineon Technologies

IRFH5015TRPBF

Infineon Technologies

IRFH5015TRPBF by Infineon Technologies is a N-CHANNEL FET with 150V DS Breakdown Voltage and 220A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.031 ohm RDS(on), and 250W Pdiss. Operating in ENHANCEMENT MODE, this transistor has a max temp of 150°C and matte tin finish.
FDMS86252L by Onsemi

FDMS86252L

Onsemi

FDMS86252L by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, 30A IDM, and 0.056 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 50W and can withstand temperatures up to 150°C.
IRLML0030TRPBF-1 by International Rectifier

IRLML0030TRPBF-1

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;
SPW20N60C3FKSA1 by Infineon Technologies

SPW20N60C3FKSA1

Infineon Technologies

SPW20N60C3FKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, 62.1A IDM, and 0.19 ohm RDS(on). It is used in power applications due to its 690mJ EAS rating, operating at up to 150°C.
NTD3055L104T4G by Onsemi

NTD3055L104T4G

Onsemi

NTD3055L104T4G by Onsemi is a power FET with 60V DS breakdown voltage, 45A IDM, and 0.104 ohm RDS(on). It is an N-channel transistor for switching applications. Operating in enhancement mode, it has a max power dissipation of 48W and can handle up to 175°C temperature.
FDS3890 by Onsemi

FDS3890

Onsemi

FDS3890 by Onsemi is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it features a SEPARATE configuration with 2 ELEMENTS, built-in DIODE, and 0.044 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE, has a max power dissipation of 2W, and can withstand temperatures up to 175°C.
IRF9640STRLPBF by Vishay Intertechnology

IRF9640STRLPBF

Vishay Intertechnology

Vishay Intertechnology's IRF9640STRLPBF is a P-CHANNEL FET with 200V DS breakdown voltage and 44A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 0.5 ohm on-resistance and 125W power dissipation.
IRLML2502GTRPBF by International Rectifier

IRLML2502GTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Position: DUAL; Maximum Pulsed Drain Current (IDM): 33 A;
SI7461DP-T1-GE3 by Vishay Intertechnology

SI7461DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7461DP-T1-GE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 8.6A Drain Current, and 0.0145 ohm On Resistance. Ideal for power management applications due to its 60A Pulsed Drain Current capability and 125mJ Avalanche Energy Rating in a small outline package.
IPB010N06NATMA1 by Infineon Technologies

IPB010N06NATMA1

Infineon Technologies

Infineon's IPB010N06NATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Features include 720A pulsed drain current, 1600mJ avalanche energy rating, and 0.001 ohm max on-resistance. With a max power dissipation of 300W and operating temp up to 175°C, it's suitable for high-power circuits in various industries.
SI4946BEY-T1-GE3 by Vishay Siliconix

SI4946BEY-T1-GE3

Vishay Siliconix

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .041 ohm;
IRF7413ZTRPBF by International Rectifier

IRF7413ZTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN;
BSP129H6327XTSA1 by Infineon Technologies

BSP129H6327XTSA1

Infineon Technologies

Infineon's BSP129H6327XTSA1 is a N-CHANNEL FET with 240V DS Breakdown Voltage and 1.4A IDM. Ideal for DEPLETION MODE operation, it features a built-in diode and 20 ohm Drain-Source On Resistance. Widely used in automotive applications due to AEC-Q101 compliance.
IRFP260NPBF by Infineon Technologies

IRFP260NPBF

Infineon Technologies

IRFP260NPBF by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a 300W Power Dissipation, -55 to 175 °C Operating Temp, and 0.04 ohm On Resistance.