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Manufacturer | Toshiba |
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Manufacturer's Part Number | TPCA8053-H(T2L1,VM |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Package Shape: SQUARE; Transistor Element Material: SILICON; |
Datasheet | TPCA8053-H(T2L1,VM Datasheet |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 16 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 90 pF |
Maximum Drain Current (ID): | 15 A |
Maximum Pulsed Drain Current (IDM): | 45 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 5 |
Minimum DS Breakdown Voltage: | 60 V |
Maximum Power Dissipation (Abs): | 30 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | S-PDSO-F5 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Drain Current (Abs) (ID): | 15 A |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .024 ohm |