Toshiba - TPH2R805PL

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TPH2R805PL by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPH2R805PL
Description Small Signal Field-Effect Transistors;
Datasheet TPH2R805PL Datasheet
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BSS84Q-7-F by Diodes Inc. is a P-CHANNEL FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode and small outline package style. Operating in enhancement mode, it offers high performance at up to 150°C temperature.
BSS138 by Good-ark Electronics

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SI2309CDS-T1-GE3 by Vishay Intertechnology

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SI2309CDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 1.6A Drain Current, and 0.345 ohm On Resistance. With ENHANCEMENT MODE operation, this transistor has a max power dissipation of 1.7W and operates b/w -55 to 150 °C temperature range.
MMBF170 by Onsemi

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The Onsemi MMBF170 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 0.5A max drain current and 5 ohm on resistance, it offers efficient performance in small outline packages.
LND150N3-GP003 by Microchip Technology

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2N7000 by Inter F E T

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2N7002DW by Panjit International

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NDC7003P by Fairchild Semiconductor

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IRLML2803TRPBF by International Rectifier

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2N7002 by Onsemi

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BS170F by Zetex Plc

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MMBF170 by Fairchild Semiconductor

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