Toshiba - TPHR8504PL,L1Q

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TPHR8504PL,L1Q by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPHR8504PL,L1Q
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Pulsed Drain Current (IDM): 500 A; Terminal Position: DUAL;
Datasheet TPHR8504PL,L1Q Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 336 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 58 pF
Maximum Drain Current (ID): 150 A
Maximum Pulsed Drain Current (IDM): 500 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 40 V
Maximum Power Dissipation (Abs): 170 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0014 ohm
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