Toshiba - YTAF630

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YTAF630 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number YTAF630
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation Ambient: 30 W; Transistor Application: SWITCHING; Avalanche Energy Rating (EAS): 98 mJ;
Datasheet YTAF630 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 98 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10 A
Maximum Pulsed Drain Current (IDM): 40 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 30 W
Maximum Drain-Source On Resistance: .4 ohm
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