Tt Electronics Plc - OP515B

  1. Home
  2. Tt Electronics Plc - OP515B
OP515B by Tt Electronics Plc

Image shown is a representation only.

Manufacturer Tt Electronics Plc
Manufacturer's Part Number OP515B
Description PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; No. of Functions: 1; Configuration: SINGLE; Minimum Operating Temperature: -55 Cel; Nominal Light Current: 3 mA;
Datasheet OP515B Datasheet
NAME DESCRIPTION
Maximum Dark Current: 100 nA
Shape: ROUND
Configuration: SINGLE
Size: 1.35 mm
Minimum Operating Temperature: -55 Cel
Mounting Feature: RADIAL MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: 3 mA
Peak Wavelength (nm): 935
Maximum Power Dissipation: .1 W
Maximum Operating Temperature: 125 Cel
Minimum Collector-emitter Breakdown Voltage: 30 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

ASDL-6771-C22 by Broadcom

ASDL-6771-C22

Broadcom

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; Configuration: SINGLE; Size: 1.6 mm; JESD-609 Code: e3;
QSB363C by Onsemi

QSB363C

Onsemi

The Onsemi QSB363C is a 2mm phototransistor with peak wavelength of 940nm. It operates b/w -25 °C to 85°C, with max power dissipation of 0.075W. Ideal for IR applications, it has a min collector-emitter breakdown voltage of 30V and nominal light current of 1.5mA.
SFH303FA by Infineon Technologies

SFH303FA

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Infrared (IR) Range: YES; No. of Functions: 1; Minimum Operating Temperature: -40 Cel;
TPS617-B by Toshiba

TPS617-B

Toshiba

PHOTO DARLINGTON; Maximum Dark Current: 250 nA; Additional Features: HIGH SENSITIVITY; SIDE VIEW; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 75 Cel; Nominal Light Current: 1.7 mA;
SFH313 by Infineon Technologies

SFH313

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000012 s; Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0;
TPS615-AB by Toshiba

TPS615-AB

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .02 mA; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Dark Current: 100 nA; Configuration: SINGLE;
KDT00030TR by Onsemi

KDT00030TR

Onsemi

The Onsemi KDT00030TR is a phototransistor with peak wavelength of 630nm. It operates b/w -40°C to 85°C, with max dark current of 100nA. Ideal for surface mount applications in optoelectronic circuits requiring photo detection at specific wavelengths.
PT334-6C by Everlight Electronics

PT334-6C

Everlight Electronics

The Everlight Electronics PT334-6C is a 5mm phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and nominal light current of 3.5mA. Ideal for applications requiring IR detection in through hole mounting configurations.
OP800A by Optotek

OP800A

Optotek

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -65 Cel; Shape: ROUND; Peak Wavelength (nm): 890;
SD1440-003L by Micro Switch

SD1440-003L

Micro Switch

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Maximum Response Time: .000015 s; Minimum Operating Temperature: -55 Cel;
OP520 by Tt Electronics Plc

OP520

Tt Electronics Plc

OP520 by Tt Electronics Plc is a phototransistor with peak wavelength of 935nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and max on state current of 0.02A. Ideal for surface mount applications requiring high sensitivity in optoelectronics.
QSB363YR by Onsemi

QSB363YR

Onsemi

The Onsemi QSB363YR is a single phototransistor with a peak wavelength of 940nm. It operates b/w -25°C to 85°C, with a max power dissipation of 0.075W. Ideal for applications requiring infrared detection in compact spaces due to its small size and surface mount feature.
OP550A by Optek Technology

OP550A

Optek Technology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 1.58 mm; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Power Dissipation: .1 W;
BPX43-2 by Infineon Technologies

BPX43-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .33 W; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 880;
LTR-4206 by Lite-on Technology

LTR-4206

Lite-on Technology

The Lite-on Technology LTR-4206 is a 3mm round photo transistor with max temp of 85°C and min temp of -40°C. It has nominal light current of 4mA, dark current of 100nA, and response time of 0.000005s. Ideal for optoelectronic applications requiring through hole mounting in the IR range.
SFH303-2 by Infineon Technologies

SFH303-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Peak Wavelength (nm): 850; Maximum Operating Temperature: 100 Cel;
OP802WSL by Optotek

OP802WSL

Optotek

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Peak Wavelength (nm): 930; Maximum On State Current: .05 A; Maximum Operating Temperature: 125 Cel;
TEST2600 by Temic Semiconductors

TEST2600

Temic Semiconductors

PHOTO TRANSISTOR; Maximum Dark Current: 100 nA; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 70 V; No. of Functions: 1; Nominal Light Current: 2.5 mA;
TIL67 by Texas Instruments

TIL67

Texas Instruments

TIL67 by Texas Instruments is a phototransistor with peak wavelength of 820nm. It operates b/w -40°C to 85°C, dissipating up to 0.05W power. With a response time of 0.000008s and dark current of 25nA, it's ideal for applications requiring precise light detection in various environments.
VEMT2523SLX01 by Vishay Intertechnology

VEMT2523SLX01

Vishay Intertechnology

Vishay Intertechnology's VEMT2523SLX01 is an 850nm peak wavelength phototransistor with a max operating temperature of 100°C. With a nominal light current of 2.7mA and min collector-emitter breakdown voltage of 20V, it is ideal for applications requiring precise light detection in environments ranging from -40°C to 100°C.