Tt Electronics Plc - OP600B

  1. Home
  2. Tt Electronics Plc - OP600B
OP600B by Tt Electronics Plc

Image shown is a representation only.

Manufacturer Tt Electronics Plc
Manufacturer's Part Number OP600B
Description PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Shape: ROUND; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -65 Cel; Size: 1.52 mm;
Datasheet OP600B Datasheet
NAME DESCRIPTION
Maximum Dark Current: 100 nA
Shape: ROUND
Configuration: SINGLE
Size: 1.52 mm
Sub-Category: Photo Transistors
Minimum Operating Temperature: -65 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: .6 mA
Peak Wavelength (nm): 890
Maximum Power Dissipation: .05 W
Maximum Operating Temperature: 125 Cel
Minimum Collector-emitter Breakdown Voltage: 25 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TPS605(LB) by Toshiba

TPS605(LB)

Toshiba

PHOTO DARLINGTON; No. of Functions: 1; Maximum Dark Current: 250 nA; Size: 1.6 mm; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 30 V;
PT8L by Renesas Electronics

PT8L

Renesas Electronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -40 Cel; Maximum Power Dissipation: .25 W;
SFH309PF2 by Infineon Technologies

SFH309PF2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000005 s; Maximum Power Dissipation: .165 W; JESD-609 Code: e0;
SD5410-002 by Honeywell Sensing And Control

SD5410-002

Honeywell Sensing And Control

SD5410-002 by Honeywell Sensing And Control is a PHOTO DARLINGTON phototransistor with a max operating temperature of 125°C and a min operating temperature of -55°C. It has a max power dissipation of 0.15W and a max dark current of 250nA. This through-hole mount component is commonly used in optoelectronic applications.
TPS622(B) by Toshiba

TPS622(B)

Toshiba

PHOTO TRANSISTOR; Additional Features: SIDE VIEW; Shape: ROUND; Peak Wavelength (nm): 870; Infrared (IR) Range: YES; Minimum Operating Temperature: -25 Cel;
PH108A-T by Renesas Electronics

PH108A-T

Renesas Electronics

PHOTO TRANSISTOR; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .6 mA; Maximum Dark Current: 100 nA; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 30 V;
FLD00030 by Onsemi

FLD00030

Onsemi

The Onsemi FLD00030 is a single phototransistor with peak wavelength of 630nm. It operates b/w -40 °C to 85°C, with collector-emitter breakdown voltage of 6V. Ideal for light sensing applications due to its nominal light current of 1.1mA and low dark current of 100nA.
TPS603 by Toshiba

TPS603

Toshiba

PHOTO TRANSISTOR; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 20 V; Configuration: SINGLE;
SFH320FA-3/-4 by Infineon Technologies

SFH320FA-3/-4

Infineon Technologies

Infineon's SFH320FA-3/-4 phototransistors operate b/w -40°C to 100°C, with peak wavelength of 900nm. They have a max power dissipation of 0.165W and response time of 0.000008s. Ideal for surface mount applications, these devices can handle a max on-state current of 0.015A.
TPS613-B by Toshiba

TPS613-B

Toshiba

PHOTO TRANSISTOR; Nominal Light Current: .034 mA; Minimum Collector-emitter Breakdown Voltage: 20 V; Size: 3 mm; Maximum Operating Temperature: 75 Cel; Peak Wavelength (nm): 720;
3036 by Nte Electronics

3036

Nte Electronics

PHOTO DARLINGTON; Shape: ROUND; Nominal Light Current: 12 mA; No. of Functions: 1; Configuration: SINGLE; Size: 4.69 mm;
TPS625 by Toshiba

TPS625

Toshiba

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Size: 1.5 mm; Nominal Light Current: 2 mA; Shape: ROUND;
LTR-4206 by Lite-on Technology

LTR-4206

Lite-on Technology

The Lite-on Technology LTR-4206 is a 3mm round photo transistor with max temp of 85°C and min temp of -40°C. It has nominal light current of 4mA, dark current of 100nA, and response time of 0.000005s. Ideal for optoelectronic applications requiring through hole mounting in the IR range.
SFH320 by Infineon Technologies

SFH320

Infineon Technologies

SFH320 by Infineon Technologies is a single phototransistor with peak wavelength of 860nm. It operates b/w -40 to 100°C, has a max power dissipation of 0.165W, and can handle an on-state current of 0.015A. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2.4mm and surface mount feature.
SFH313FA-2 by Infineon Technologies

SFH313FA-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Peak Wavelength (nm): 870; Maximum Operating Temperature: 100 Cel;
SFH309FA-4 by Infineon Technologies

SFH309FA-4

Infineon Technologies

SFH309FA-4 by Infineon Technologies is a phototransistor with a peak wavelength of 900nm. It can operate in temperatures ranging from -55°C to 100°C and has a max power dissipation of 0.165W. This through-hole mount device is commonly used in applications requiring fast response times and low dark current.
SD2440-003 by Micro Switch

SD2440-003

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .125 W;
SDP8436-002 by Micro Switch

SDP8436-002

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .06 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .00001 s;
SDP8406-003 by Honeywell Sensing And Control

SDP8406-003

Honeywell Sensing And Control

SDP8406-003 by Honeywell is a single phototransistor with max temp of 85°C and min temp of -40°C. It has a nominal light current of 3.4mA, dark current of 100nA, and response time of 0.000015s. With a collector-emitter breakdown voltage of 30V, it is ideal for optoelectronic applications requiring precise light detection.
SFH325-4 by Infineon Technologies

SFH325-4

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Configuration: SINGLE; Maximum Power Dissipation: .165 W; Maximum Dark Current: 200 nA;