Vishay Intertechnology - SI7148DP-T1-GE3

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SI7148DP-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI7148DP-T1-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 96 W; Maximum Turn On Time (ton): 96 ns; Additional Features: AVALANCHE RATED;
Datasheet SI7148DP-T1-GE3 Datasheet
In Stock3,738
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 96 ns
Maximum Drain Current (ID): 28 A
Maximum Pulsed Drain Current (IDM): 60 A
Surface Mount: YES
Terminal Finish: PURE MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 96 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 90 ns
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .011 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 100 mJ
Other Names: SI7148DP-T1-GE3DKR
SI7148DP-T1-GE3-ND
SI7148DP-T1-GE3TR
SI7148DP-T1-GE3CT
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 75 V
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 28 A
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