Vishay Intertechnology - SI7540ADP-T1-GE3

  1. Home
  2. Vishay Intertechnology - SI7540ADP-T1-GE3
SI7540ADP-T1-GE3 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI7540ADP-T1-GE3
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 20 V;
Datasheet SI7540ADP-T1-GE3 Datasheet
In Stock7,498
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 35 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .015 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
7,498 $0.678 $5,083.644

Popular Products

Category Top Products

IRF640NSTRLPBF by Infineon Technologies

IRF640NSTRLPBF

Infineon Technologies

Infineon's IRF640NSTRLPBF is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 72A IDM, 247mJ EAS, and 0.15 ohm RDS(ON). Operating from -55 to 175 °C, this MOSFET has a max power dissipation of 150W in a small outline package.
IRF7341TRPBF by Infineon Technologies

IRF7341TRPBF

Infineon Technologies

Infineon's IRF7341TRPBF is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 42A IDM, 140mJ EAS, and 0.05 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it suits various high-power electronic designs.
NTMFS5C604NLT1G by Onsemi

NTMFS5C604NLT1G

Onsemi

NTMFS5C604NLT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 900A IDM, and 0.0017 ohm RDS(on). It is used in power applications due to its 200W max power dissipation, -55 to 175 °C operating temp range, and built-in diode configuration.
IRF3710STRLPBF by International Rectifier

IRF3710STRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; JESD-30 Code: R-PSSO-G2;
SQJ402EP-T1_GE3 by Vishay Intertechnology

SQJ402EP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ402EP-T1_GE3 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 32A ID. Ideal for applications requiring high current handling, such as power supplies or motor control systems. Features include 48mJ EAS rating, -55 to 175 °C operating temp range, and 0.011 ohm Drain-Source On Resistance.
TN2510N8-G by Microchip Technology

TN2510N8-G

Microchip Technology

TN2510N8-G by Microchip Technology is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 5A IDM, 1.6W Abs Power Dissipation, and operates in ENHANCEMENT MODE. With METAL-OXIDE SEMICONDUCTOR technology and -55 to 150 °C temperature range, it offers fast ton of 20ns and toff of 30ns for efficient performance.
BSC340N08NS3GATMA1 by Infineon Technologies

BSC340N08NS3GATMA1

Infineon Technologies

Infineon's BSC340N08NS3GATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 92A IDM, 20mJ EAS, and 0.034 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a max power dissipation of 32W in a small outline package.
NVMFS5C604NLAFT1G by Onsemi

NVMFS5C604NLAFT1G

Onsemi

NVMFS5C604NLAFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
BSC220N20NSFDATMA1 by Infineon Technologies

BSC220N20NSFDATMA1

Infineon Technologies

BSC220N20NSFDATMA1 by Infineon is a N-CHANNEL FET for SWITCHING applications. It features a 200V DS Breakdown Voltage, 208A Pulsed Drain Current, and 0.022 ohm On Resistance. With a max power dissipation of 214W, this MOSFET operates in an Enhancement Mode with an operating temperature range from -55 to 175°C.
IRF9530 by Samsung

IRF9530

Samsung

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Transistor Application: SWITCHING;
STS4DNF60L by STMicroelectronics

STS4DNF60L

STMicroelectronics

STS4DNF60L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 16A IDM, and 0.065 ohm RDS(on). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package. Operating at up to 150°C, it offers high power dissipation and avalanche energy rating.
SQM120P10-10M1L_GE3 by Vishay Intertechnology

SQM120P10-10M1L_GE3

Vishay Intertechnology

Vishay Intertechnology's SQM120P10-10M1L_GE3 is a P-channel FET with 100V DS breakdown voltage, 480A IDM, and 0.0101 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRF7424TRPBF by Infineon Technologies

IRF7424TRPBF

Infineon Technologies

Infineon's IRF7424TRPBF is a P-CHANNEL FET with 30V DS Breakdown Voltage, 11A Drain Current, and 0.0135 ohm On Resistance. Ideal for power applications in electronics due to its 2.5W Power Dissipation, -55 to 150°C Operating Temperature range, and compact SINGLE configuration for surface mount assembly.
IRFB4227PBF by Infineon Technologies

IRFB4227PBF

Infineon Technologies

IRFB4227PBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 260A IDM and 0.024 ohm RDS(on), operating in ENHANCEMENT MODE. With a max power dissipation of 330W, it is suitable for high-power electronic systems.
RFD16N05LSM9A by Fairchild Semiconductor

RFD16N05LSM9A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; JEDEC-95 Code: TO-252AA; Terminal Form: GULL WING;
BS170 by Philips Semiconductors

BS170

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDS8949 by Onsemi

FDS8949

Onsemi

FDS8949 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 20A IDM. It features SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE configuration, suitable for applications requiring high power dissipation in small outline packages. Ideal for enhancing performance in electronic devices operating at temperatures up to 150°C.
STL60N10F7 by STMicroelectronics

STL60N10F7

STMicroelectronics

Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
PSMN040-100MSEX by NXP Semiconductors

PSMN040-100MSEX

NXP Semiconductors

PSMN040-100MSEX by NXP Semiconductors is a single-channel N-CHANNEL power FET with a max drain current of 30A and max power dissipation of 91W. It operates in enhancement mode and is suitable for applications requiring high power and temperature resistance.
NTF3055L108T1G by Onsemi

NTF3055L108T1G

Onsemi

NTF3055L108T1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.12 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in enhancement mode, it has a max power dissipation of 2.1W and can withstand temperatures up to 175°C.