Vishay Intertechnology - SI7540ADP-T1-GE3

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SI7540ADP-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI7540ADP-T1-GE3
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 20 V;
Datasheet SI7540ADP-T1-GE3 Datasheet
In Stock7,498
NAME DESCRIPTION
Other Names: SI7540ADP-T1-GE3TR
SI7540ADP-T1-GE3CT
SI7540ADP-T1-GE3DKR
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 35 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .015 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
7,498 $0.678 $5,083.644

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