Vishay Intertechnology - SIHP17N80E-GE3

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SIHP17N80E-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIHP17N80E-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
Datasheet SIHP17N80E-GE3 Datasheet
In Stock49,498
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 92 ns
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 45 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 208 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 194 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .29 ohm
Avalanche Energy Rating (EAS): 353 mJ
Other Names: SIHP17N80E-GE3-ND
742-SIHP17N80E-GE3
Maximum Feedback Capacitance (Crss): 9 pF
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 800 V
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
49,498 $2.150 $106,420.700

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