Vishay Intertechnology - SIR826BDP-T1-RE3

SIR826BDP-T1-RE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIR826BDP-T1-RE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; No. of Elements: 1; No. of Terminals: 5;
Datasheet SIR826BDP-T1-RE3 Datasheet
In Stock87,555
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 44 ns
Maximum Drain Current (ID): 80.8 A
Maximum Pulsed Drain Current (IDM): 200 A
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 83 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 66 ns
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0062 ohm
Avalanche Energy Rating (EAS): 45 mJ
Maximum Feedback Capacitance (Crss): 17.5 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 80 V
Maximum Drain Current (Abs) (ID): 80.8 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
87,555 $0.595 $52,095.225

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