SIRA10BDP-T1-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SIRA10BDP-T1-GE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; Terminal Form: FLAT; Avalanche Energy Rating (EAS): 20 mJ;
Datasheet	SIRA10BDP-T1-GE3 Datasheet
In Stock	36,885

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	55 ns
Maximum Drain Current (ID):	60 A
Maximum Pulsed Drain Current (IDM):	150 A
Surface Mount:	YES
No. of Terminals:	5
Maximum Power Dissipation (Abs):	43 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	70 ns
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0036 ohm
Avalanche Energy Rating (EAS):	20 mJ
Maximum Feedback Capacitance (Crss):	68 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Maximum Drain Current (Abs) (ID):	60 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
36,885	$0.335	$12,356.475

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