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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SIZ710DT-T1-GE3 |
| Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Maximum Pulsed Drain Current (IDM): 70 A; Avalanche Energy Rating (EAS): 20 mJ; |
| Datasheet | SIZ710DT-T1-GE3 Datasheet |
| In Stock | 78,056 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 16 A |
| Maximum Pulsed Drain Current (IDM): | 70 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | 48 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-XDSO-N6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0068 ohm |
| Avalanche Energy Rating (EAS): | 20 mJ |
| Other Names: |
SIZ710DT-T1-GE3TR SIZ710DT-T1-GE3DKR SIZ710DTT1GE3 SIZ710DT-T1-GE3CT |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 20 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 35 A |
| Peak Reflow Temperature (C): | 260 |









