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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | SIZ918DT-T1-GE3 |
Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; |
Datasheet | SIZ918DT-T1-GE3 Datasheet |
In Stock | 5,000 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 16 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 16 A |
Maximum Pulsed Drain Current (IDM): | 50 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 6 |
Minimum DS Breakdown Voltage: | 30 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-N6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | DRAIN SOURCE |
Maximum Drain-Source On Resistance: | .012 ohm |