Vishay Intertechnology - SIZ918DT-T1-GE3

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SIZ918DT-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIZ918DT-T1-GE3
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
Datasheet SIZ918DT-T1-GE3 Datasheet
In Stock5,000
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 16 mJ
Other Names: SIZ918DT-T1-GE3CT
SIZ918DT-T1-GE3TR
SIZ918DT-T1-GE3DKR
SIZ918DTT1GE3
Package Body Material: PLASTIC/EPOXY
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 16 A
Maximum Pulsed Drain Current (IDM): 50 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN SOURCE
Maximum Drain-Source On Resistance: .012 ohm
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