Vishay Intertechnology - SQ1902AEL-T1_GE3

  1. Home
  2. Vishay Intertechnology - SQ1902AEL-T1_GE3
SQ1902AEL-T1_GE3 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQ1902AEL-T1_GE3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; No. of Elements: 2; Terminal Position: DUAL;
Datasheet SQ1902AEL-T1_GE3 Datasheet
In Stock16,417
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 12 pF
Maximum Drain Current (ID): .8 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Maximum Power Dissipation (Abs): 1.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .28 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
16,417 $0.302 $4,957.934

Popular Products

Category Top Products

BS170G by Onsemi

BS170G

Onsemi

BS170G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 0.35W and can withstand temperatures up to 150°C.
BC548B by Allegro MicroSystems

BC548B

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
BS170P by Zetex Plc

BS170P

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: RECTANGULAR; No. of Elements: 1; No. of Terminals: 3;
2N7002-7-F by SPC TECHNOLOGY/ MULTICOMP

2N7002-7-F

SPC TECHNOLOGY/ MULTICOMP

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
AO3401L by Alpha & Omega Semiconductor

AO3401L

Alpha & Omega Semiconductor

AO3401L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.2A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C, featuring 0.05 ohm RDS(on) and 77 pF Crss capacitance.
2N7000/D74Z by National Semiconductor

2N7000/D74Z

National Semiconductor

2N7000/D74Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for SWITCHING applications, with 0.2A ID and 5 ohm RDS(on). Suitable for low-power circuits due to 0.4W Pdiss and 150°C Tjmax.
FDV301N_NL by Fairchild Semiconductor

FDV301N_NL

Fairchild Semiconductor

FDV301N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.22A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY transistor comes in a GULL WING package style suitable for surface mount assembly.
2N7002BKW,115 by Nexperia

2N7002BKW,115

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; No. of Terminals: 3; JESD-30 Code: R-PDSO-G3;
FDC6327C by Onsemi

FDC6327C

Onsemi

FDC6327C by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It has a max drain current of 2.7A, on-resistance of 0.08 ohm, and operates in enhancement mode for switching applications. The package is SMD, with 6 terminals in Gull Wing form, rated up to 150°C.
FDV302PD87Z by Fairchild Semiconductor

FDV302PD87Z

Fairchild Semiconductor

Fairchild Semiconductor's FDV302PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A ID, and 10 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
IRLHS6376TRPBF by Infineon Technologies

IRLHS6376TRPBF

Infineon Technologies

IRLHS6376TRPBF by Infineon is a N-CHANNEL FET with 30V DS breakdown voltage and 3.4A max drain current, ideal for switching applications. It features separate elements with built-in diode in a small outline package, operating in enhancement mode at up to 150°C. With 0.082 ohm max on-resistance and 6.6W power dissipation, it offers reliable performance for various electronic designs.
MMBFJ113 by Onsemi

MMBFJ113

Onsemi

MMBFJ113 by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.35 W and max drain-source on resistance of 100 ohm. Ideal for SWITCHING applications, this small outline transistor can handle up to 150 °C operating temperature.
ZVP2106ASTZ by Zetex Plc

ZVP2106ASTZ

Zetex Plc

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
IRF7820TRPBF by Infineon Technologies

IRF7820TRPBF

Infineon Technologies

IRF7820TRPBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It has 3.7A Drain Current, 0.078 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor in GULL WING package is designed for ENHANCEMENT MODE operation.
BS170 by Siemens

BS170

Siemens

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Package Shape: ROUND;
FDS4935BZ by Onsemi

FDS4935BZ

Onsemi

FDS4935BZ by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 6.9A Drain Current, and 0.022 ohm On Resistance. Ideal for SWITCHING applications, it features a RECTANGULAR package with GULL WING terminals and operates in ENHANCEMENT MODE at up to 150°C.
FDN352AP by Onsemi

FDN352AP

Onsemi

FDN352AP by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 1.3A, 0.18 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. This small outline transistor has a max Power Dissipation of 0.5W and can withstand temperatures up to 150°C.
2N7002L by Vishay Siliconix

2N7002L

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: TO-236; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS84Q-7-F by Diodes Incorporated

BSS84Q-7-F

Diodes Incorporated

BSS84Q-7-F by Diodes Inc. is a P-CHANNEL FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode and small outline package style. Operating in enhancement mode, it offers high performance at up to 150°C temperature.
2N7002K by Panjit International

2N7002K

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Form: GULL WING; Additional Features: ULTRA-LOW RESISTANCE;