SQ2325ES-T1-GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQ2325ES-T1-GE3
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .84 A; Terminal Form: GULL WING; Maximum Feedback Capacitance (Crss): 22 pF;
Datasheet	SQ2325ES-T1-GE3 Datasheet
In Stock	32,844

NAME	DESCRIPTION
Other Names:	742-SQ2325ES-T1_GE3DKR 742-SQ2325ES-T1_GE3CT SQ2325ES-T1_GE3CT 742-SQ2325ES-T1_GE3TR SQ2325ES-T1_GE3TR SQ2325ES-T1_GE3CT-ND SQ2325ES-T1_GE3TR-ND
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	22 pF
Maximum Drain Current (ID):	.84 A
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	3
Minimum DS Breakdown Voltage:	150 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	1.77 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
32,844	-	-

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