Vishay Intertechnology - SQ2348ES-T1-GE3

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SQ2348ES-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQ2348ES-T1-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G3; Package Shape: RECTANGULAR;
Datasheet SQ2348ES-T1-GE3 Datasheet
In Stock57,965
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 19 ns
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 32 A
Surface Mount: YES
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 41 ns
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .024 ohm
Avalanche Energy Rating (EAS): 12 mJ
Other Names: SQ2348ES-T1_GE3CT
SQ2348ES-T1_GE3-ND
SQ2348ES-T1-GE3
SQ2348ES-T1-GE3-ND
SQ2348ES-T1_GE3DKR
SQ2348ES-T1_GE3TR
Maximum Feedback Capacitance (Crss): 50 pF
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
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