Vishay Intertechnology - SQ3425EV-T1_GE3

SQ3425EV-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQ3425EV-T1_GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 20 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet SQ3425EV-T1_GE3 Datasheet
In Stock40,109
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 190 pF
Maximum Drain Current (ID): 7.4 A
JEDEC-95 Code: MO-193AA
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .06 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
40,109 $0.225 $9,024.525

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