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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | SQ3425EV-T1_GE3 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 20 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
Datasheet | SQ3425EV-T1_GE3 Datasheet |
In Stock | 40,109 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Feedback Capacitance (Crss): | 190 pF |
Maximum Drain Current (ID): | 7.4 A |
JEDEC-95 Code: | MO-193AA |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 6 |
Minimum DS Breakdown Voltage: | 20 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G6 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum Drain-Source On Resistance: | .06 ohm |