Vishay Intertechnology - SQ4410EY-T1_GE3

SQ4410EY-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQ4410EY-T1_GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 30 V; JEDEC-95 Code: MS-012AA;
Datasheet SQ4410EY-T1_GE3 Datasheet
In Stock4,303
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 28 ns
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 60 A
Surface Mount: YES
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 56 ns
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .012 ohm
Avalanche Energy Rating (EAS): 72 mJ
Maximum Feedback Capacitance (Crss): 230 pF
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Reference Standard: AEC-Q101
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